PART |
Description |
Maker |
HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module 262114-word x 8 bit dynamic random access memory module 26214-word x 8-bit dynamic random access memory module 262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
M5M4V4265CJ-5 M5M4V4265CJ-5S M5M4V4265CJ-6 M5M4V42 |
EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M44265CJ-7S M5M44265CTP-6S M5M44265CTP-5S |
EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM 江户(超页模式)4194304位(262144字由16位)动态随机存储器
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
HM514800ALJ-7 HM514800ALJ-8 HM51S4800ALJ-7 HM51480 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory 80ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
HM514800CLJ-6 HM514800CLJ-7 HM514800CLJ-8 HM514800 |
524,288-word X 8-bit Dynamic Random Access Memory
|
HITACHI[Hitachi Semiconductor]
|
AK5368192WP-70 |
8,388,608 by 36 Bit CMOS Dynamic Random Access Memory
|
http:// ACCUTEK MICROCIRCUIT CORPORATION
|
HM514170C HM514170CJ-7 HM514170CLJ-7 HM514170CLJ-8 |
262,144-word x 16-bit Dynamic Random Access Memory
|
Hitachi Semiconductor
|
AK5321024 |
2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
AK5322048W AK5322048Z |
2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|