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NTE21256 - 262,144-Bit Dynamic Random Access Memory (DRAM)

NTE21256_328097.PDF Datasheet


 Full text search : 262,144-Bit Dynamic Random Access Memory (DRAM)


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PART Description Maker
HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- x8 Fast Page Mode DRAM Module
262114-word x 8 bit dynamic random access memory module
26214-word x 8-bit dynamic random access memory module
262锛?14-word x 8-bit dynamic random access memory module
Hitachi,Ltd.
M5M4V4265CJ-5 M5M4V4265CJ-5S M5M4V4265CJ-6 M5M4V42 EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
M5M44265CJ-7S M5M44265CTP-6S M5M44265CTP-5S EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM 江户(超页模式)4194304位(262144字由16位)动态随机存储器
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
HM514800ALJ-7 HM514800ALJ-8 HM51S4800ALJ-7 HM51480 70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
80ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
Hitachi Semiconductor
HM514800CLJ-6 HM514800CLJ-7 HM514800CLJ-8 HM514800 524,288-word X 8-bit Dynamic Random Access Memory
HITACHI[Hitachi Semiconductor]
AK5368192WP-70 8,388,608 by 36 Bit CMOS Dynamic Random Access Memory
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ACCUTEK MICROCIRCUIT CORPORATION
HM514170C HM514170CJ-7 HM514170CLJ-7 HM514170CLJ-8 262,144-word x 16-bit Dynamic Random Access Memory
Hitachi Semiconductor
AK5321024 2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory
ACCUTEK MICROCIRCUIT CORPORATION
AK5322048W AK5322048Z 2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory
ACCUTEK MICROCIRCUIT CORPORATION
 
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